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DMN100
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features
* * * Extremely Low On-Resistance: 170mW @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits
SC-59
A D TOP VIEW B S D G H K J L M C
Dim A B C D E G H J K L M
Min 0.30 1.40 2.50 0.85 0.30 1.70 2.70 3/4 1.00 0.55 0.10
Max 0.50 1.80 3.00 1.05 0.70 2.10 3.10 0.10 1.40 0.70 0.35
Mechanical Data
* * * * * * Case: SC-59, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagrams Weight: 0.008 grams (approx.) Ordering Information, See Sheet 2
G E
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation
@ TA = 25C unless otherwise specified Symbol VDSS Continuous Continuous Pulsed VGSS ID Pd RqJA Tj, TSTG DMN100 30 20 1.1 4.0 500 250 -55 to +150 Units V V A mW K/W C
Characteristic
Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Notes:
1. Pulse width 300ms, duty cycle 2%.
DS30049 Rev. 5 - 2
1 of 3
DMN100
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 1) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 1) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time
@ TA = 25C unless otherwise specified Symbol BVDSS @ Tj = 25C @ Tj = 125C IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss Qg Qgs Qgd tD(ON) tD(OFF) tr tf IS ISM VSD trr Min 30 3/4 3/4 1.0 3/4 1.3 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ 3/4 3/4 3/4 3/4 3/4 2.4 150 90 30 5.5 0.8 1.3 10 25 15 45 3/4 3/4 3/4 35 Max 3/4 1.0 10 100 3.0 0.170 0.240 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 0.54 4.0 1.2 3/4 Unit V A nA V W S pF pF pF nC nC nC ns ns ns ns A A V ns 3/4 3/4 IF = 1.0A, VGS = 0V IF = 1.0A, di/dt = 50A/ms VDD = 10V, ID = 0.5A, VGS = 5.0V, RGEN = 50W VDS = 24V, ID = 1.0A, VGS = 10V VDS = 10V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 250mA VDS = 24V, VGS = 0V VGS = 12V, VDS = 0V VDS = 10V, ID =1.0mA VGS = 4.5V, ID = 0.5A VGS = 10V, ID = 1.0A VDS = 10V, ID =0.5A
SOURCE- DRAIN RATINGS (BODY DIODE) Continuous Source Current Pulse Source Current Forward Voltage Reverse Recovery Time Notes: 1. Pulse width 300ms, duty cycle 2%.
Ordering Information
Device DMN100-7 Notes:
(Note 2) Packaging SC-59 Shipping 3000/Tape & Reel
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XXX X
XXX = Product Type Marking Code X = Assembly Lot No. [0-9, A-Z, except G, I, J, O, Q, W]
DS30049 Rev. 5 - 2
2 of 3
DMN100
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 10V 5.0V 4.5V 4.0V 3.5V
1.0
ID, DRAIN CURRENT (A)
Vgs = 4.5V
3.0V
0.1
Vgs = 10V
2.5V
0
1
2
3
4
5
0.01
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics
ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current
4.0
0.30 0.25 0.20
VGS = 4.5V, RDS @ 0.5A
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0
VGS = 10V TA = 25C
0.15 0.10
VGS = 10V, RDS @ 1.0A
0.05 0 -50
0
50
100
150
1
2
3
4
5
Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs Junction Temperature
VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs Gate-Source Voltage
DS30049 Rev. 5 - 2
3 of 3
DMN100

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